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NCE80H16 Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET
◁
http://www.ncepower.com
Pb Free Product
NCE80H16
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.53
℃/W
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
80 88
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=80V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
On Characteristics (Note 3)
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
3
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
-
3.7
4.7
mΩ
Forward Transconductance
Dynamic Characteristics (Note4)
gFS
VDS=5V,ID=20A
60
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
- 6500
-
PF
VDS=25V,VGS=0V,
Coss
-
810
-
PF
F=1.0MHz
Crss
-
310
-
PF
Turn-on Delay Time
td(on)
- 31.5
-
nS
Turn-on Rise Time
Turn-Off Delay Time
tr
VDD=40V,ID=2A,RL=15Ω
-
33
-
nS
td(off)
VGS=10V,RG=2.5Ω
-
46
-
nS
Turn-Off Fall Time
tf
- 17.5
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
130
nC
VDS=40V,ID=20A,
Qgs
-
36
nC
VGS=10V
Qgd
-
46
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
VSD
VGS=0V,IS=40A
-
1.2
V
IS
-
-
160
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF = 20A
-
51
-
nS
Qrr
di/dt = 500A/μs(Note3)
-
61
-
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,VDD=40V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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