NCE75H26T Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE75H26T
Operating Junction and Storage Temperature Range
T_J,T_STG
-55 To 175
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case ^{(Note 1)}
R_θJC
0.39
℃/W
Electrical Characteristics (T_C=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
75
86
-
V
Zero Gate Voltage Drain Current
I_DSS
V_DS=75V,V_GS=0V
-
-
1
μA
Gate-Body Leakage Current
I_GSS
V_GS=±20V,V_DS=0V
-
-
±200
nA
On Characteristics
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS,I_D=250μA
2
3
4
V
Drain-Source On-State Resistance
R_DS(ON)
V_GS=10V, I_D=40A
-
2.1
3
mΩ
Forward Transconductance
g_FS
V_DS=25V,I_D=40A
260
-
-
S
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_lss
- 15700
-
PF
V_DS=30V,V_GS=0V,
C_oss
- 2410
-
PF
F=1.0MHz
C_rss
- 1240
-
PF
Switching Characteristics
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
t_d(on)
t_r
t_d(off)
t_f
V_DD=38V,I_D=40A
V_GS=10V,R_GEN=1.2Ω
(Note2)
-
17
-
nS
-
80
-
nS
-
100
-
nS
-
62
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
-
160
-
nC
V_DS=38V,I_D=160A,
Q_gs
-
35
-
nC
V_GS=10V(Note2)
Q_gd
-
55
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
V_SD
V_GS=0V,I_S=40A
-
-
1.2
V
Reverse Recovery Time
Reverse Recovery Charge
t_rr
TJ = 25°C, IF = 40A
-
52
-
nS
Qrr
di/dt = 100A/μs^(Note2)
-
110
-
nC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Surface Mounted on FR4 Board, t ≤ 10 sec.
2. Pulse Test: Pulse Width ≤ 400μs, Duty Cycle ≤ 2%.
3. EAS condition：Tj=25℃,V_DD=37.5V,V_G=10V,L=2mH,Rg=25Ω,I_AS=37A
4. ISD≤125A, di/dt≤260A/μs, VDD≤V(BR)DSS，TJ ≤175°C
Wuxi NCE Power Semiconductor Co., Ltd
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