NCE70H17 Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE70H17
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
0.53
℃/W
Electrical Characteristics (T_C=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=250μA
70
-
-
V
Zero Gate Voltage Drain Current
I_DSS
V_DS=70V,V_GS=0V
-
-
1
μA
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
I_GSS
V_GS=±20V,V_DS=0V
-
-
±100
nA
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS,I_D=250μA
2
3
4
V
Drain-Source On-State Resistance
R_DS(ON)
V_GS=10V, I_D=20A
-
3.3
4.3
mΩ
Forward Transconductance
Dynamic Characteristics ^(Note4)
g_FS
V_DS=5V,I_D=20A
50
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
C_lss
- 6500
-
PF
V_DS=25V,V_GS=0V,
C_oss
- 1076
-
PF
F=1.0MHz
C_rss
-
485
-
PF
Turn-on Delay Time
t_d(on)
-
31
-
nS
Turn-on Rise Time
Turn-Off Delay Time
t_r
VDD=35V,R_L=15Ω,
-
29
-
nS
t_d(off)
R_G=2.5Ω,VGS=10V
-
41
-
nS
Turn-Off Fall Time
t_f
-
13
-
nS
Total Gate Charge
Gate-Source Charge
Q_g
-
130
-
nC
Q_gs
ID=20A,VDD=35V,VGS=10V -
36
-
nC
Gate-Drain Charge
Q_gd
-
46
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Diode Forward Current ^{(Note 2)}
Reverse Recovery Time
Reverse Recovery Charge
V_SD
V_GS=0V,I_S=20A
-
-
1.2
V
I_S
-
-
170
A
t_rr
Tj=25℃,IF=20A,
-
50
nS
Qrr
di/dt=500A/uS ^(Note3)
-
61
nC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition：Tj=25℃,V_DD=35V,V_G=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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