NCE6990 Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE6990
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
RθJC
0.9
℃ /W
Electrical Characteristics (T_C=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
69 73
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=69V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
I_GSS
V_GS=±20V,V_DS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
2
2.9
4
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=30A
-
6.2
7.2
mΩ
Forward Transconductance
Dynamic Characteristics ^(Note4)
gFS
VDS=10V,ID=100A
25
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
Clss
Coss
Crss
- 3400
-
PF
VDS=25V,VGS=0V,
-
310
-
PF
F=1.0MHz
-
221
-
PF
Turn-on Delay Time
td(on)
-
15
-
nS
Turn-on Rise Time
tr
VDD=30V,ID=2A,RL=15Ω
-
11
-
nS
Turn-Off Delay Time
td(off)
VGS=10V,RG=2.5Ω
-
52
-
nS
Turn-Off Fall Time
tf
-
13
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
-
94
-
nC
VDS=30V,ID=30A,
Qgs
-
16
-
nC
VGS=10V
Qgd
-
24
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Diode Forward Current ^{(Note 2)}
VSD
IS
VGS=0V,IS=30A
-
-
1.2
V
-
-
78
A
Reverse Recovery Time
Reverse Recovery Charge
trr
TJ = 25°C, IF =75A
-
33
nS
Qrr
di/dt = 100A/μs^(Note3)
-
54
nC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition:Tj=25℃,V_DD=35V,V_G=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
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