NCE60P50 Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE60P50
Thermal Characteristic
Thermal Resistance, Junction-to-Case^{(Note 2)}
R_θJC
1.31
℃/W
Electrical Characteristics (T_C=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
BV_DSS
V_GS=0V I_D=-250μA
-60
-
-
V
Zero Gate Voltage Drain Current
I_DSS
V_DS=-60V,V_GS=0V
-
-
-1
μA
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
I_GSS
V_GS=±20V,V_DS=0V
-
-
±100
nA
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS,I_D=-250μA
-1.2 -1.9 -2.5
V
Drain-Source On-State Resistance
R_DS(ON)
V_GS=-10V, I_D=-20A
-
23
28
mΩ
Forward Transconductance
Dynamic Characteristics ^(Note4)
g_FS
V_DS=-10V,I_D=-10A
-
25
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
C_lss
- 6460
-
PF
V_DS=-25V,V_GS=0V,
C_oss
-
719
-
PF
F=1.0MHz
C_rss
-
535
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
t_d(on)
-
15
-
nS
t_r
V_DD=-30V, R_L=1.5Ω，
-
17
-
nS
t_d(off)
V_GS=-10V,R_G=3Ω
-
40
-
nS
Turn-Off Fall Time
t_f
-
45
-
nS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q_g
-
75
nC
V_DS=-30,I_D=-10A,
Q_gs
-
16
nC
V_GS=-10V
Q_gd
-
19
nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Diode Forward Current ^{(Note 2)}
V_SD
V_GS=0V,I_S=-10A
-
-1.2
V
I_S
-
-
-20
A
Reverse Recovery Time
Reverse Recovery Charge
t_rr
TJ = 25°C, IF =- 10A
-
50
nS
Qrr
di/dt = -100A/μs^(Note3)
-
59
nC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. E_AS condition: Tj=25℃,V_DD=-20V,V_G=-10V,L=1mH,Rg=25Ω,I_AS=38A
Wuxi NCE Power Semiconductor Co., Ltd
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