NCE6050KA Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE6050KA
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
1.8
℃/W
Electrical Characteristics (T_C=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
BV_DSS
I_DSS
I_GSS
V_GS=0V I_D=250μA
V_DS=60V,V_GS=0V
V_GS=±20V,V_DS=0V
60
-
-
V
-
-
1
μA
-
-
±100
nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics ^(Note4)
V_GS(th)
R_DS(ON)
g_FS
V_DS=V_GS,I_D=250μA
V_GS=10V, I_D=20A
V_DS=5V,I_D=20A
1.4 1.9
2.5
V
-
14
20
mΩ
18
-
-
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
C_lss
C_oss
V_DS=30V,V_GS=0V,
F=1.0MHz
- 2050
-
PF
-
158
-
PF
C_rss
-
120
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_DD=30V, R_L=6.7Ω
V_GS=10V,R_G=3Ω
V_DS=30V,I_D=20A,
V_GS=10V
-
7.4
-
nS
-
5.1
-
nS
-
28.2
-
nS
-
5.5
-
nS
-
50
nC
-
6
nC
-
15
nC
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Diode Forward Current ^{(Note 2)}
Reverse Recovery Time
Reverse Recovery Charge
V_SD
V_GS=0V,I_S=20A
-
1.2
V
I_S
-
-
50
A
t_rr
TJ = 25°C, IF =20A
-
28
-
nS
Qrr
di/dt = 100A/μs^(Note3)
-
40
-
nC
Forward Turn-On Time
t_on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v1.0