NCE55P30K Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE55P30K
Electrical Characteristics (T_C=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
BV_DSS
I_DSS
I_GSS
V_GS=0V I_D=-250μA
V_DS=-55V,V_GS=0V
V_GS=±20V,V_DS=0V
Gate Threshold Voltage
V_GS(th)
V_DS=V_GS,I_D=-250μA
Drain-Source On-State Resistance
R_DS(ON)
V_GS=-10V, I_D=-15A
Forward Transconductance
Dynamic Characteristics ^(Note4)
g_FS
V_DS=-25V,I_D=-16A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
C_lss
C_oss
V_DS=-30V,V_GS=0V,
F=1.0MHz
C_rss
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_DD=-30V,I_D=-15A
V_GS=-10V,R_GEN=3Ω
V_DS=-30V,I_D=-15A,
V_GS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Diode Forward Current ^{(Note 2)}
Reverse Recovery Time
Reverse Recovery Charge
V_SD
V_GS=0V,I_S=-15A
I_S
t_rr
TJ = 25°C, IF = -15A
Qrr
di/dt = 100A/μs^(Note3)
Min Typ Max Unit
-55
-
-
V
-
-
1
μA
-
-
±100
nA
-2 -2.6
-4
V
-
30
40
mΩ
8
-
-
S
- 3500
-
PF
-
240
-
PF
-
153
-
PF
-
12
-
nS
-
15
-
nS
-
38
-
nS
-
15
-
nS
-
56
-
nC
-
11
-
nC
-
24
-
nC
-
-
1.2
V
-
-
-30
A
-
-
71
nS
-
-
170
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. E_AS condition：Tj=25℃,V_DD=-25V,V_G=-20V,L=0.5mH,Rg=25Ω,I_AS=29A
Wuxi NCE Power Semiconductor Co., Ltd
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