NCE3401AY Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE3401AY
Parameter
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics ^{(Note 3)}
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics ^(Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics ^{(Note 4)}
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage ^{(Note 3)}
Symbol
I_DSS
I_GSS
Condition
V_DS=-24V,V_GS=0V
V_GS=±12V,V_DS=0V
Min Typ
-
-
-
-
Max
-1
±100
Unit
μA
nA
V_GS(th)
R_DS(ON)
g_FS
V_DS=V_GS,I_D=-250μA
V_GS=-10V, I_D=-4.2A
V_GS=-4.5V, I_D=-4A
V_GS=-2.5V, I_D=-1A
V_DS=-5V,I_D=-2A
-0.7 -1
-1.3
V
-
39
52
mΩ
-
46
65
mΩ
61
80
mΩ
-
10
-
S
C_lss
C_oss
V_DS=-15V,V_GS=0V,
F=1.0MHz
- 950
-
PF
- 115
-
PF
C_rss
-
75
-
PF
t_d(on)
-
7
-
nS
t_r
V_DD=-15V,I_D=-3.2A
-
3
-
nS
t_d(off)
V_GS=-10V,R_GEN=6Ω
-
30
-
nS
t_f
-
12
-
nS
Q_g
-
9.5
-
nC
Q_gs
V_DS=-15V,I_D=-4A,V_GS=-4.5V -
2
-
nC
Q_gd
-
3
-
nC
V_SD
V_GS=0V,I_S=-1A
-
-
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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