NCEP15T11T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Super Trench Power MOSFET

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Pb Free Product
NCEP15T11T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP15T11T uses Super Trench technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
R_DS(ON) and Q_g. This device is ideal for high-frequency
switching and synchronous rectification.
General Features
● VDS =150V,ID =110A
RDS(ON) <7.8mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
TO-247 top view
100% UIS TESTED!
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP15T11T
NCEP15T11T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
150
±20
110
93
440
300
2
1296
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
0.5
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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