NCEP15T11J Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Super Trench Power MOSFET

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Pb Free Product
NCEP15T11J
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP15T11J uses Super Trench technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
R_DS(ON) and Q_g. This device is ideal for high-frequency
switching and synchronous rectification.
General Features
● VDS =135V,ID =110A
RDS(ON) <7.0mΩ @ VGS=10V
● Excellent gate charge x R_DS(on) product(FOM)
● Very low on-resistance R_DS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP15T11J
NCEP15T11J
TO-220-3L
-
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
135
±20
Drain Current-Continuous
I_D
110
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy ^{(Note 5)}
Operating Junction and Storage Temperature Range
I_D (100℃)
I_DM
P_D
E_AS
T_J,T_STG
93
440
300
2
1296
-55 To 175
Quantity
-
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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