NCEP01T30T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Super Trench Power MOSFET

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Pb Free Product
NCEP01T30T
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T30T uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R_DS(ON) and Q_g. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
● V_DS =100V,I_D =300A
R_DS(ON) <2.1mΩ @ V_GS=10V
● Excellent gate charge x R_DS(on) product
● Very low on-resistance R_DS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
TO-247 top view
100% UIS TESTED!
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP01T30T
NCEP01T30T
TO-247
-
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
100
±20
Drain Current-Continuous
I_D
300
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy ^{(Note 5)}
Operating Junction and Storage Temperature Range
I_D (100℃)
I_DM
P_D
E_AS
T_J,T_STG
220
1200
520
3.47
3400
-55 To 175
Quantity
-
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
0.29
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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