NCEP01T13D Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Super Trench Power MOSFET

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Pb Free Product
NCEP01T13D
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T13D uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R_DS(ON) and Q_g. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
● V_DS =100V,I_D =135A
R_DS(ON) <4.5mΩ @ V_GS=10V
● Excellent gate charge x R_DS(on) product
● Very low on-resistance R_DS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP01T13D
NCEP01T13D
TO-263-2L
-
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
100
±20
Drain Current-Continuous (Silicon Limited)
I_D
150
Drain Current-Continuous (Package Limited)
I_D
135
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy ^{(Note 5)}
Operating Junction and Storage Temperature Range
I_D (100℃)
I_DM
P_D
E_AS
T_J,T_STG
108
500
220
1.5
1156
-55 To 175
Quantity
-
Unit
V
V
A
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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