NCEP01T11 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Super Trench Power MOSFET

http://www.ncepower.com
Pb Free Product
NCEP01T11
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T11 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of R_DS(ON) and Q_g. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
● V_DS =100V,I_D =108A
R_DS(ON) <6.5mΩ @ V_GS=10V
Schematic diagram
● Excellent gate charge x R_DS(on) product(FOM)
● Very low on-resistance R_DS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous
rectification
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCEP01T11
NCEP01T11
TO-220-3L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Limit
100
±20
108
78
380
160
1.1
676
Unit
V
V
A
A
A
W
W/℃
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0