NCE85H21T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE85H21T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21T uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
● V_DSS =85V,I_D =210A
R_DS(ON) < 3.5mΩ @ V_GS=10V
● Good stability and uniformity with high E_AS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21T
NCE85H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 3)}
Peak Diode Recovery dv/dt ^{(Note 4)}
E_AS
dv/dt
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
85
±20
210
150
850
330
2.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
Wuxi NCE Power Semiconductor Co., Ltd
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