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NCE85H21 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE85H21
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be
used in automotive applications and a wide variety of other
applications.
General Features
â VDSS =85V,ID =210Aï¼Note5ï¼
RDS(ON) < 3.8m⦠@ VGS=10V
Schematic diagram
â Good stability and uniformity with high EAS
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Excellent package for good heat dissipation
Application
â Automotive applications
â Hard switched and high frequency circuits
â Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% âVds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE85H21
NCE85H21
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Limit
85
±20
210ï¼Note5ï¼
150
850
310
2.07
Unit
V
V
A
A
A
W
W/â
Wuxi NCE Power Semiconductor Co., Ltd
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