NCE8580D Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE8580D
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE8580D uses advanced trench technology and design
to provide excellent R_DS(ON) with low gate charge. This device is
suitable for use in PWM, load switching and general purpose
applications.
General Features
● V_DS =85V,I_D =80A
R_DS(ON) < 8.5mΩ @ V_GS=10V
(Typ:6.8mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Special designed for convertors and power controls
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Power switching application
● Hard switched and High frequency circuits
● Uninterruptible power supply
100% UIS TESTED!
Marking and pin assignment
100% ∆Vds TESTED!
TO-263-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE8580D
NCE8580D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
I_D
I_D (100℃)
I_DM
P_D
dv/dt
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
85
±20
80
60
320
170
15
1.13
620
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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