|
NCE8060D Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
|
http://www.ncepower.com
Pb Free Product
NCE8060D
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE8060D uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
GENERAL FEATURES
â VDS = 80V,ID =60A
RDS(ON) < 12m⦠@ VGS=10V
(Typ:10mâ¦)
Schematic diagram
â Special process technology for high ESD capability
â High density cell design for ultra low Rdson
â Fully characterized Avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard Switched and High Frequency Circuits
â Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ÎVds TESTED!
TO-263-2L top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE8060D
NCE8060D
TO-263-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(TC=100â)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
ID
ID (100â)
IDM
PD
Single pulse avalanche energy (Note 5)
EAS
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
80
±20
60
40
200
130
0.86
350
-55 To 175
Unit
V
V
A
A
A
W
W/â
mJ
â
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
|
▷ |