NCE75H35T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE75H35T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE75H35T uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It can
be used in automotive applications and a wide variety of other
applications.
General Features
● V_DSS =75V,I_D =350A
R_DS(ON) < 2.2mΩ @ V_GS=10V （Typ：1.7 mΩ）
Schematic diagram
● Good stability and uniformity with high E_AS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE75H35T
NCE75H35T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
I_D
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 3)}
Peak Diode Recovery dv/dt ^{(Note 4)}
E_AS
dv/dt
Limit
75
±20
350
270
1280
460
3.07
3500
13
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
Wuxi NCE Power Semiconductor Co., Ltd
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