NCE75H21T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE75H21T
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE75H21T uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It can
be used in Automotive applications and a wide variety of other
applications.
GENERAL FEATURES
● V_DSS =75V,I_D =210A
R_DS(ON) < 4mΩ @ V_GS=10V
Schematic diagram
● Good stability and uniformity with high E_AS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-247 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE75H21T
NCE75H21T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Limit
75
±20
210
150
850
480
3.2
Unit
V
V
A
A
A
W
W/℃
Wuxi NCE Power Semiconductor Co., Ltd
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