NCE75H21 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE75H21
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE75H21 uses advanced trench technology and design
to provide excellent R_DS(ON) with low gate charge. It can be
used in Automotive applications and a wide variety of other
applications.
GENERAL FEATURES
● V_DSS =75V,I_D =210A
R_DS(ON) < 4mΩ @ V_GS=10V
Schematic diagram
● Good stability and uniformity with high E_AS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Automotive applications
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin Assignment
100% UIS TESTED!
100% ΔVds TESTED!
TO-220 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE75H21
NCE75H21
TO-220
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
I_D
I_D (100℃)
I_DM
P_D
Single pulse avalanche energy (Note 3)
E_AS
Peak Diode Recovery dv/dt (Note 4)
dv/dt
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
75
±20
210
150
850
480
3.2
2200
5
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
V/ns
℃
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0