NCE7580T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE7580T
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE7580T uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
General Features
● V_DS = 75V,I_D =80A
R_DS(ON) <8mΩ @ V_GS=10V（Typ：6.5mΩ）
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-247 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7580T
NCE7580T
TO-247
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current-Continuous(T_C=100℃)
Pulsed Drain Current
Maximum Power Dissipation
Peak diode recovery voltage
I_D
I_D (100℃)
I_DM
P_D
dv/dt
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
75
±25
80
60
320
180
30
1.2
600
-55 To 175
Unit
V
V
A
A
A
W
V/ns
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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