NCE7560K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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NCE7560K
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7560K uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate
charge. It can be used in a wide variety of applications.
Features
● V_DS=75V；I_D=60A@ V_GS=10V；
R_DS(ON)<8mΩ @ V_GS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Product Summary
BV_DSS typ.
84
R_DS(ON) typ.
6.8
max.
8.0
I_D
60
V
mΩ
mΩ
A
100% UIS TESTED!
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking And Ordering Information
Device Marking
Device
Device Package
NCE7560K
NCE7560K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (TA=25℃)
Parameter
Drain-Source Voltage (V_GS=0V）
Gate-Source Voltage (V_DS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
Peak diode recovery voltage
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy ^{(Note 2)}
Operating Junction and Storage Temperature Range
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition：Tj=25℃,VDD=50V,VG=10V,L=0.5mH
Symbol
V_DS
V_GS
I_{D (DC)}
I_{D (DC)}
I_{DM (pluse)}
dv/dt
P_D
E_AS
T_J,T_STG
Value
75
±25
60
48
310
30
140
0.95
300
-55 To 175
Unit
V
V
A
A
A
V/ns
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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