NCE7559K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
NCE7559K
Pb-Free Product
NCE N-Channel Enhancement Mode Power MOSFET
General Description
The NCE7559k uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in PWM, load switching and
general purpose applications.
Product Summary
BV_DSS typ.
84
V
R_DS(ON) typ.
7.2
mΩ
max.
8.5
mΩ
I_D
59
A
Features
● V_DS=75V；I_D=59A@ V_GS=10V；
R_DS(ON)<8.5mΩ @ V_GS=10V
● Special process technology for high ESD capability
● Special designed for Convertors and power controls
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
100% UIS TESTED!
Application
● Power switching application
● Hard Switched and High Frequency Circuits
● Uninterruptible Power Supply
TO-252-2L top view
Schematic diagram
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE7559K
NCE7559K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Drain-Source Voltage (V_GS=0V）
Gate-Source Voltage (V_DS=0V)
Drain Current (DC) at Tc=25℃
Drain Current (DC) at Tc=100℃
Drain Current-Continuous@ Current-Pulsed ^{(Note 1)}
Maximum Power Dissipation(Tc=25℃)
Derating factor
Single pulse avalanche energy ^{(Note 2)}
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_{D (DC)}
I_{D (DC)}
I_{DM (pluse)}
P_D
E_AS
T_J,T_STG
Value
75
±20
59
41
230
130
0.87
550
-55 To 175
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2.EAS condition : Tj=25℃,VDD=37.5V,V_G=10V,L=0.5mH
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.1