NCE70R1K2K Datasheet, PDF (1/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET

NCE70R1K2K,NCE70R1K2I
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS
700
V
RDS(ON)TYP.
1200
mΩ
I_D
4
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE70R1K2I
TO-251
NCE70R1K2I
NCE70R1K2K
TO-252
NCE70R1K2K
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current ^{(Note 1)}
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25℃)
PD
Derate above 25°C
Single pulse avalanche energy ^(Note2)
EAS
Avalanche current^{(Note 1)}
I_AR
Repetitive Avalanche energy ，t_AR limited by T_jmax
(Note 1)
E_AR
TO-251
TO-252
Value
700
±30
4
2.5
12
46
0.37
130
2
0.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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http://www.ncepower.com V1.0