NCE6602 Datasheet, PDF (1/11 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N and P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE6602
NCE N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE6602 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge. This device is suitable for
use as a Battery protection or in other Switching application.
General Features
● N-Channel
● V_DS = 30V,I_D = 3.5A
R_DS(ON) <58mΩ @ V_GS=10V
R_DS(ON) < 95mΩ @ V_GS=4.5V
● P-Channel
V_DS = -30V,I_D = -2.7A
R_DS(ON) < 100mΩ @ V_GS=-10V
R_DS(ON) < 150mΩ @ V_GS=-4.5V
● Low On-Resistance
● Low Input Capacitance
● Fast Switching Speed
● Low Input/Output Leakage
N-channel
P-channel
Schematic diagram
Marking and pin Assignment
SOT23-6L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
6602
NCE6602
SOT23-6L
Reel Size
Ø180mm
Tape width
8mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_A=25℃
I_D
T_A=70℃
Pulsed Drain Current ^{(Note 1)}
I_DM
Maximum Power Dissipation
T_A=25℃
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^(Note2)
R_θJA
Thermal Resistance,Junction-to-Ambient ^(Note2)
R_θJA
N-Channel P-Channel
30
-30
±20
±20
3.5
-2.7
3
-2.1
20
-15
1.2
-55 To 150
-55 To 150
Unit
V
V
A
A
W
℃
N-Ch
P-Ch
104
℃ /W
104
℃ /W
Wuxi NCE Power Semiconductor Co., Ltd
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