NCE65R900D Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET ll

NCE65R900D，NCE65R900, NCE65R900F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
V_DS
650
V
R_DS(ON)
900
mΩ
I_D
5
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R900D
TO-263
NCE65R900D
NCE65R900
TO-220
NCE65R900
NCE65R900F
TO-220F
NCE65R900F
TO-263 TO-220
TO-220F
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current ^{(Note 1)}
Drain Source voltage slope, VDS = 480 V, ID =5 A, Tj =
125 °C
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy ^(Note2)
Avalanche current^{(Note 1)}
VDS
VGS
I_{D (DC)}
I_{D (DC)}
I_{DM (pluse)}
dv/dt
P_D
EAS
I_AR
NCE65R900
NCE65R900F
NCE65R900D
650
±30
5
5*
3
3*
15
15*
48
49
29
0.39
0.23
135
2.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0