NCE65R360D Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET ll

NCE65R360D,NCE65R360,NCE65R360F
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
V_DS
650
V
R_DS(ON)MAX
360
mΩ
I_D
11
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R360D
TO-263
NCE65R360D
NCE65R360
TO-220
NCE65R360
NCE65R360F
TO-220F
NCE65R360F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current ^{(Note 1)}
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy ^(Note2)
Avalanche current^{(Note 1)}
Repetitive Avalanche energy ，t_AR limited by T_jmax
(Note 1)
VDS
VGS
I_{D (DC)}
I_{D (DC)}
I_{DM (pluse)}
P_D
EAS
I_AR
E_AR
NCE65R360D
NCE65R360F
NCE65R360
650
±30
11
11*
7
7*
33
33*
121
32.7
0.97
0.26
280
5.5
0.5
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
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