NCE65R1K2I Datasheet, PDF (1/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET II

NCE65R1K2I，NCE65R1K2K
N-Channel Super Junction Power MOSFET Ⅱ
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
VDS
650
V
RDS(ON) MAX
1200
mΩ
I_D
4
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R1K2I
TO-251
NCE65R1K2I
NCE65R1K2K
TO-252
NCE65R1K2K
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current ^{(Note 1)}
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25℃)
PD
Derate above 25°C
Single pulse avalanche energy ^(Note2)
EAS
Avalanche current^{(Note 1)}
I_AR
Repetitive Avalanche energy ，t_AR limited by T_jmax
(Note 1)
E_AR
TO-251
TO-252
Value
650
±30
4
2.5
12
46
0.37
130
2
0.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
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