NCE65R1K2 Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET

NCE65R1K2,NCE65R1K2D,NCE65R1K2F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
V_DS
650
V
R_{DS(ON) MAX}
1200
mΩ
I_D
4
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R1K2
TO-220
NCE65R1K2
NCE65R1K2D
TO-263
NCE65R1K2D
NCE65R1K2F
TO-220F
NCE65R1K2F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current ^{(Note 1)}
Maximum Power Dissipation(Tc=25℃)
Derate above 25°C
Single pulse avalanche energy ^(Note2)
Avalanche current^{(Note 1)}
Repetitive Avalanche energy ，t_AR limited by T_jmax
(Note 1)
VDS
VGS
I_{D (DC)}
I_{D (DC)}
I_{DM (pluse)}
P_D
EAS
I_AR
E_AR
NCE65R1K2
NCE65R1K2F
NCE65R1K2D
650
±30
4
4*
2.5
2.5
12
12
46
28.5
0.37
0.23
130
2
0.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com v1.0