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NCE60R900I Datasheet, PDF (1/8 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET ll | |||
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NCE60R900Iï¼NCE60R900K
N-Channel Super Junction Power MOSFET â
¡
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industryâs
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
âNew technology for high voltage device
âLow on-resistance and low conduction losses
âSmall package
âUltra Low Gate Charge cause lower driving requirements
â100% Avalanche Tested
âROHS compliant
VDS @Tjmax
650
V
RDS(ON).
900
mΩ
ID
5
A
Application
â Power factor correctionï¼PFCï¼
â Switched mode power supplies(SMPS)
â Uninterruptible Power Supplyï¼UPSï¼
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R900I
TO-251
NCE60R900I
NCE60R900K
TO-252
NCE60R900K
Table 1. Absolute Maximum Ratings (TC=25â)
Parameter
Symbol
Drain-Source Voltage (VGS=0Vï¼
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Drain Source voltage slope, VDS = 480 V, ID = 5 A, Tj =
125 °C
ID (DC)
ID (DC)
IDM (pluse)
dv/dt
Maximum Power Dissipation(Tc=25â)
PD
Derate above 25°C
Single pulse avalanche energy (Note2)
EAS
Avalanche current(Note 1)
IAR
TO-251
TO-252
Value
600
±30
5
3
15
48
49
0.39
135
2.5
Unit
V
V
A
A
A
V/ns
W
W/°C
mJ
A
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0
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