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NCE60R1K2Z Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET II | |||
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NCE60R1K2Z
N-Channel Super Junction Power MOSFET â
¡
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industryâs
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
âNew technology for high voltage device
âLow on-resistance and low conduction losses
âSmall package
âUltra Low Gate Charge cause lower driving requirements
â100% Avalanche Tested
âROHS compliant
VDS@Tjmax
650
V
RDS(ON) MAX
1200
mâ¦
ID
4
A
Application
â Power factor correctionï¼PFCï¼
â Switched mode power supplies(SMPS)
â Uninterruptible Power Supplyï¼UPSï¼
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R1K2Z
TO-92
NCE60R1K2Z
Table 1. Absolute Maximum Ratings (TC=25â)
Parameter
Symbol
Drain-Source Voltage (VGS=0Vï¼
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
ID (DC)
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
ID (DC)
IDM (pluse)
Maximum Power Dissipation(Tc=25â)
PD
Derate above 25°C
Single pulse avalanche energy (Note2)
EAS
Avalanche current(Note 1)
IAR
Repetitive Avalanche energy ï¼tAR limited by Tjmax
(Note 1)
EAR
TO-92
Value
600
±30
4
2.5
12
4
0.03
130
2
0.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com v1.0
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