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NCE60R1K2 Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET II | |||
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NCE60R1K2,NCE60R1K2D,NCE60R1K2F
N-Channel Super Junction Power MOSFET â
¡
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industryâs
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
âNew technology for high voltage device
âLow on-resistance and low conduction losses
âSmall package
âUltra Low Gate Charge cause lower driving requirements
â100% Avalanche Tested
âROHS compliant
VDS@Tjmax
650
V
RDS(ON) MAX
1200
mâ¦
ID
4
A
Application
â Power factor correctionï¼PFCï¼
â Switched mode power supplies(SMPS)
â Uninterruptible Power Supplyï¼UPSï¼
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R1K2
TO-220
NCE60R1K2
NCE60R1K2D
TO-263
NCE60R1K2D
NCE60R1K2F
TO-220F
NCE60R1K2F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25â)
Parameter
Symbol
Drain-Source Voltage (VGS=0Vï¼
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25â)
Derate above 25°C
Single pulse avalanche energy (Note2)
Avalanche current(Note 1)
Repetitive Avalanche energy ï¼tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE60R1K2
NCE60R1K2F
NCE60R1K2D
600
±30
4
4*
2.5
2.5
12
12
46
28.5
0.37
0.23
130
2
0.2
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com v1.0
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