NCE60R180T Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N-Channel Super Junction Power MOSFET

NCE60R180T
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant
T V_DS@ _jmax
650
V
R_{DS(ON) MAX}
180
mΩ
I_D
21
A
Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS）
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE60R180T
TO-247
NCE60R180T
Table 1. Absolute Maximum Ratings (T_C=25℃)
Parameter
Symbol
Drain-Source Voltage (VGS=0V）
VDS
Gate-Source Voltage (VDS=0V)
VGS
Continuous Drain Current at Tc=25°C
I_{D (DC)}
Continuous Drain Current at Tc=100°C
Pulsed drain current ^{(Note 1)}
I_{D (DC)}
I_{DM (pluse)}
Maximum Power Dissipation(Tc=25℃)
P_D
Derate above 25°C
Single pulse avalanche energy ^{(Note 2)}
EAS
Avalanche current^{(Note 1)}
I_AR
Repetitive Avalanche energy ，t_AR limited by T_jmax
(Note 1)
E_AR
NCE60R180T
600
±30
21
13.2
63
200
1.6
690
7
1
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
v1.0