NCE60P25K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE60P25K
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE60P25K uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge .This
device is well suited for high current load applications.
General Features
● V_DS =-60V,I_D =-25A
R_DS(ON) <45mΩ @ V_GS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
Schematic diagram
Application
● High side switch for full bridge converter
● DC/DC converter for LCD display
100% UIS TESTED!
100% ∆Vds TESTED!
Marking and pin assignment
TO-252 -2Ltop view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE60P25K
NCE60P25K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Single pulse avalanche energy ^{(Note 5)}
E_AS
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-60
±20
-25
-17.7
-60
90
0.72
300
-55 To 150
Unit
V
V
A
A
A
W
W/℃
mJ
℃
Wuxi NCE Power Semiconductor Co., Ltd
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