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NCE6075K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE6075K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6075K uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =60V,ID =75A
RDS(ON) < 11.5m⦠@ VGS=10V
(Typ:9.1mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Good stability and uniformity with high EAS
â Excellent package for good heat dissipation
â Special process technology for high ESD capability
Schematic diagram
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible Power Supply
Marking and pin assignment
100% UIS TESTED!
100% âVds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCE6075K
NCE6075K
TO-252-2L
-
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
60
±20
Drain Current-Continuous
ID
75
Drain Current-Continuous(TC=100â)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100â)
IDM
PD
EAS
TJ,TSTG
50
300
110
0.73
450
-55 To 175
Quantity
-
Unit
V
V
A
A
A
W
W/â
mJ
â
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
1.36
â /W
Wuxi NCE Power Semiconductor Co., Ltd
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