NCE603S Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE 60V Complementary MOSFET

http://www.ncepower.com
Pb Free Product
NCE603S
NCE 60V Complementary MOSFET
Description
The NCE603S uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
N channel
● V_DS =60V,I_D =6A
R_DS(ON) <60mΩ @ V_GS=10V
p channel
● V_DS =-60V,I_D =-6A
R_DS(ON) <80mΩ @ V_GS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Schematic diagram
Marking and pin assignment
Application
● H-bridge
● Inverters
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE603S
NCE603S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
T_C=25℃
T_C=100℃
6
I_D
4.2
I_DM
30
Maximum Power Dissipation
T_C=25℃
P_D
2
Operating Junction and Storage Temperature Range
T_J,T_STG
-55 To 175
Thermal Characteristic
N-channel
Thermal Resistance,Junction-to- Ambient ^{(Note 2)}
R_θJA
P-channel
Thermal Resistance,Junction-to- Ambient ^{(Note 2)}
R_θJA
P-Channel
-60
±20
-6
-4.2
-30
2
-55 To 175
75
50
Unit
V
V
A
A
W
℃
℃/W
℃ /W
Wuxi NCE Power Semiconductor Co., Ltd
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