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NCE6005R Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
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http://www.ncepower.com
Pb Free Product
NCE6005R
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6005R uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =60V,ID =5A
RDS(ON) < 45m⦠@ VGS=10V
ï¼Typï¼38mâ¦ï¼
D
G
S
Schematic diagram
Application
â Power switching application
â Hard switched and high frequency circuits
â Uninterruptible power supply
SOT-223-3L view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE6005R
NCE6005R
SOT-223-3L
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
60
±20
5
3.5
20
2
-55 To 150
Unit
V
V
A
A
A
W
â
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient(Note 2)
RθJA
62.5
â/W
Electrical Characteristics (TA=25âunless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
Zero Gate Voltage Drain Current
IDSS
VDS=60V,VGS=0V
Min Typ Max Unit
60
69
-
V
-
-
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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