NCE6003Y Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE6003Y
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE6003Y uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other switching application.
General Features
● V_DS =60V,I_D =3A
R_DS(ON) <105mΩ @ V_GS=10V
R_DS(ON) < 125mΩ @ V_GS=4.5V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
D
G
S
Schematic Diagram
Marking and Pin Assignment
Application
●Battery switch
●DC/DC converter
SOT-23 -3L Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
6003
NCE6003Y
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
60
±20
3
10
1.7
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV_DSS
I_DSS
V_GS=0V I_D=250μA
V_DS=60V,V_GS=0V
73.5
℃/W
Min Typ Max Unit
60 65
-
V
-
-
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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