NCE55P15K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE55P15K
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE55P15K uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =-55V,I_D =-15A
R_DS(ON) <75mΩ @ V_GS=-10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application
● Hard switched and high frequency circuits
● DC-DC Converter
Marking and pin assignment
100% UIS TESTED!
100% ∆Vds TESTED!
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE55P15K
NCE55P15K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Thermal Characteristic
Thermal Resistance ,Junction-to-Case^{(Note 2)}
R_θJC
Limit
-55
±20
-15
-10
-50
35
-55 To 175
4.3
Unit
V
V
A
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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