NCE5558K Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE5558K
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5558K uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =55V,I_D =58A
R_DS(ON) < 13mΩ @ V_GS=10V
(Typ:10.5mΩ)
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Synchronous rectifiers for, industrial power supplies
● LED backlighting
Marking and pin assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE5558K
NCE5558K
TO-252-2L
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (T_C=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
I_DM
Maximum Power Dissipation
P_D
Derating factor
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
55
±20
58
41
100
80
0.64
-55 To 150
Unit
V
V
A
A
A
W
W/℃
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case^{(Note 2)}
R_θJC
1.6
℃ /W
Wuxi NCE Power Semiconductor Co., Ltd
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