|
NCE5520Q Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET | |||
|
http://www.ncepower.com
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE5520Q uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
Pb Free Product
NCE5520Q
General Features
â VDS =55V,ID =20A
RDS(ON) < 22m⦠@ VGS=10V
(Typ:19mâ¦)
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
Application
â Industrial power supplies
â LED backlighting
Schematic diagram
Pin assignment
DFN3X3 EP top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE5520Q
NCE5520Q
DFN3X3EP
Reel Size
-
Tape width
-
Quantity
-
Absolute Maximum Ratings (TC=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
IDM
Maximum Power Dissipation
PD
Derating factor
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
55
±20
20
14
60
35
0.23
-55 To 150
Unit
V
V
A
A
A
W
W/â
â
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
3.6
â /W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
|
▷ |