NCE4688 Datasheet, PDF (1/9 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N and P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE4688
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4688 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
● N-Channel
V_DS = 60V,I_D =6.3A
R_DS(ON) < 30mΩ @ V_GS=10V
N-channel
P-channel
Schematic diagram
● P-Channel
V_DS = -60V,I_D = -5A
R_DS(ON) < 80mΩ @ V_GS=-10V
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Package Marking and Ordering Information
SOP-8 top view
Device Marking Device
Device Package Reel Size
Tape width
4688
NCE4688
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Quantity
2500 units
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
T_A=25℃
T_A=70℃
Maximum Power Dissipation
T_A=25℃
Operating Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_D
I_DM
P_D
T_J,T_STG
N-Channel
60
±20
6.3
4.5
40
2.0
-55 To 150
P-Channel
-60
±20
-5
-3.5
-25
2.0
-55 To 150
Unit
V
V
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
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