NCE4618SP Datasheet, PDF (1/6 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

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Pb Free Product
Halogen Free Compliance
NCE4618SP
NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Description
The NCE4618SP uses advanced trench technology to provide
excellent R_SS(ON), low gate charge and operation with gate
voltages as low as 2.5V while retaining a 12V V_GS(MAX) rating. It
is ESD protected. This device is suitable for use as a
unidirectional or bi-directional load switch, facilitated by its
common-drain configuration.
Package Dimensions
Unit : mm
General Features
● V_SSS =24V,I_S =6A
● 2.5V drive
● Common-drain type
● 2KV HBM
Package Information
● Minimum Packing Quantity : 5,000 pcs./reel
Application
● Lithium-ion battery charging and discharging switch
Equivalent Circuit
Marking and pin assignment
CSP top view
Absolute Maximum Ratings (T_A =25℃unless otherwise noted)
Symbol
Parameter
Limit
VSSS
Source to Source Voltage
24
VGSS
Gate-Source Voltage
±12
I_S
Source Current(DC)
6
I_SP
Source Current (Pulse)
60
P_T
Total Dissipation
1.6
Tch
Channel Temperature
150
T_STG
Storage Temperature
-55 To 150
Unit
V
V
A
A
W
℃
℃
Wuxi NCE Power Semiconductor Co., Ltd
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