NCE4503S Datasheet, PDF (1/10 Pages) Wuxi NCE Power Semiconductor Co., Ltd – N and P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE4503S
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE4503S uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge . The SOP-8 package
is universally preferred for all commercial industrial
surface mount applications and suited for low voltage
applications such as DC/DC converters.
General Features
● N-Channel
V_DS = 30V,I_D =10A
R_DS(ON) < 20mΩ @ V_GS=4.5V
R_DS(ON) < 13.5mΩ @ V_GS=10V
● P-Channel
V_DS = -30V,I_D = -9.1A
R_DS(ON) < 35mΩ @ V_GS=-4.5V
R_DS(ON) < 20mΩ @ V_GS=-10V
N-channel
P-channel
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin assignment
Application
● Battery protection
● Load switch
● Power management
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device Device Package
4503
NCE4503S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
N-Channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain Current
Pulsed Drain Current ^{(Note 1)}
T_A=25℃
T_A=70℃
10
I_D
7.9
I_DM
30
Maximum Power Dissipation
T_A=25℃
P_D
2.5
Operating Junction and Storage Temperature Range
T_J,T_STG
-55 To 150
P-Channel
-30
±20
-9.1
-7.2
-30
2.5
-55 To 150
Unit
V
V
A
A
W
℃
Wuxi NCE Power Semiconductor Co., Ltd
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