NCE4435 Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

Pb Free Product
NCE4435
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE4435 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 4.5V.
General Features
● V_DS = -30V,I_D = -9.1A
R_DS(ON) < 35mΩ @ V_GS=-4.5V
R_DS(ON) < 20mΩ @ V_GS=-10V
D
G
S
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
● Battery Switch
● Load switch
● Power management
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
4435
NCE4435
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
T_C =25℃
Continuous Drain Current (T_J =150℃)
T_C =70℃
T_A =25℃
I_D
T_A =70℃
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_{ST G}
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Limit
-30
±20
-11
-9
-9.1
-7.2
-50
3.1
-55 To 150
40
Unit
V
V
A
A
W
℃
℃/W
Wuxi NCE Power Semiconductor Co., Ltd
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