|
NCE40P13S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET | |||
|
http://www.ncepower.com
Pb Free Product
NCE40P13S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE40P13S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
â VDS =-40V,ID =-13A
RDS(ON) <15m⦠@ VGS=-10V
RDS(ON) <18m⦠@ VGS=-4.5V
Schematic diagram
â High density cell design for ultra low Rdson
â Fully characterized avalanche voltage and current
â Excellent package for good heat dissipation
Application
â Power switching application
â Hard switched and high frequency circuits
â DC-DC converter
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
40P13
NCE40P13S
SOP-8
Reel Size
Ã330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25âunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100â)
ID (100â)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
IDM
PD
TJ,TSTG
Limit
-40
±20
-13
-9
50
2.5
-55 To 150
Unit
V
V
A
A
A
W
â
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
50
â/W
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0
|
▷ |