NCE40P05S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE40P05S
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE40P05S uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =-40V,I_D =-5.3A
R_DS(ON) <80mΩ @ V_GS=-10V
R_DS(ON) <120mΩ @ V_GS=-4.5V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
Marking and pin assignment
● Power switching application
● Hard switched and high frequency circuits
● DC-DC converter
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
40P05
NCE40P05S
SOP-8
Ø330mm
12mm
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
-40
Gate-Source Voltage
VGS
±20
Drain Current-Continuous
I_D
-5.3
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
-3.65
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient^{(Note 2)}
I_DM
P_D
T_J,T_STG
R_θJA
-20
2.0
-55 To 150
62.5
Quantity
2500 units
Unit
V
V
A
A
A
W
℃
℃/W
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Wuxi NCE Power Semiconductor Co., Ltd
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