NCE4012S Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE4012S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE4012S uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● V_DS =40V,I_D =12A
R_DS(ON) <12mΩ @ V_GS=10V (Typ. 8.4 mΩ)
R_DS(ON) <18mΩ @ V_GS=4.5V (Typ. 12.3 mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E_AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply
Schematic diagram
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
NCE4012S
NCE4012S
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Continuous(T_C=100℃)
I_D (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
I_DM
P_D
T_J,T_STG
Limit
40
±20
12
8.5
60
3
-55 To 150
Unit
V
V
A
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
41.7
℃/W
Min Typ Max Unit
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v1.0