NCE3407AY Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE3407AY
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE3407AY uses advanced trench technology to provide
excellent R_DS(ON), This device is suitable for use as a load
switch or in PWM applications.
General Features
● V_DS = -30V,I_D = -4.3A
R_DS(ON) < 90mΩ @ V_GS=-4.5V
R_DS(ON) <52mΩ @ V_GS=-10V
D
G
S
Schematic diagram
● High power and current handing capability
● Lead free product is acquired
● Surface mount package
Marking and pin Assignment
Application
● PWM applications
● Load switch
● Power management
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3407A
NCE3407AY
SOT23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Limit
-30
±20
-4.3
-20
1.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV_DSS
I_DSS
V_GS=0V I_D=-250μA
V_DS=-24V,V_GS=0V
84
℃/W
Min Typ Max Unit
-30 -33
-
V
-
-
-1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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