NCE3404Y Datasheet, PDF (1/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com
Pb Free Product
NCE3404Y
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE3404Y uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge.This device is suitable
for use as a load switch and PWM applications.
Genera Features
● V_DS = 30V,I_D = 5.8A
R_DS(ON) < 28mΩ @ V_GS=10V
R_DS(ON) < 40mΩ @ V_GS=4.5V
● High Power and current handing capability
● Lead free product is acquired
● Surface mount package
Application
●Load switch
●PWM application
D
G
S
Schematic diagram
Marking and pin assignment
SOT-23-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
3404Y
NCE3404Y
SOT-23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T_A=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Drain Current-Pulsed ^{(Note 1)}
I_DM
Maximum Power Dissipation
P_D
Operating Junction and Storage Temperature Range
T_J,T_STG
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient ^{(Note 2)}
R_θJA
Electrical Characteristics (T_A=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BV_{DS S}
V_GS=0V I_D=250μA
Zero Gate Voltage Drain Current
I_DSS
V_DS=30V,V_GS=0V
Limit
30
±20
5.8
20
1.4
-55 To 150
Unit
V
V
A
A
W
℃
89
℃/W
Min Typ Max Unit
30 33
-
V
-
-
1
μA
Wuxi NCE Power Semiconductor Co., Ltd
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